rev. v4 hmic? silicon pin diode switch with integrated bias network MA4SW410B-1 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. 1 parameter absolute maximum operating temperature -65 o c to +125 o c storage temperature -65 o c to +150 o c junction temperature +175 o c applied reverse voltage 50v rf incident power +30dbm c.w. 1 bias current +25c 40ma note: 1. maximum operating conditions for a combination of rf power, d.c. bias and temperature: features ?? broad bandwidth specified up to 18 ghz ?? usable up to 26 ghz ?? integrated bias network ?? low insertion loss / high isolation ?? rugged, glass encapsulated construction ?? fully monolithic ?? rohs compliant* and 260c reflow compatible description the MA4SW410B-1 device is a sp4t broadband switch with integrated bias network utilizing m/a-com technology solutions hmic tm (heterolithic microwave integrated circuit) process, us patent 5,268,310. this process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. by using small spacing between elements, this combination of silicon and glass gives hmic devices low loss and high isola- tion performance with exceptional repeatability through low millimeter frequencies. large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - au/sn, 62/36/2 - sn/pb/ag solders or electrically conductive silver epoxy. yellow areas denote wire bond pads applications these high performance switches are suitable for use in multi-band ecm, radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. with a standard +5v/-5v, ttl controlled pin diode driver, 80ns switching speeds can be achieved. * restrictions on hazardous substanc es, european union directive 2002/95/ec.
rev. v4 hmic? silicon pin diode switch with integrated bias network MA4SW410B-1 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. 2 MA4SW410B-1 ( sp4t ) electrical specifications @ t amb = +25 o c, 10ma bias current 1.typical switching speed measured from 10% to 90% of detect ed rf signal driven by ttl compatible drivers using rc output spiking network, r = 50 ? 200 ? , c = 390 ? 560pf. note: operation of the MA4SW410B-1 operation of the hmic series of pin switches is achiev ed by the simultaneous app lication of negative dc current to the low loss port and positive dc current to the remaining isolated switching ports per the driver connections table below. the control currents should be su pplied by constant current sources. for insertion loss, -10ma bias results in approximately ?2v, and for isol ation ,+10ma yields approximately +0.9v at the respective bias nodes. the backside area of the die is the rf and dc return ground plane. driver connections control level (dc current) condition of rf output b2 b3 b4 b5 j1-j2 j1-j3 j1-j4 j1-j5 -10ma +10ma +10ma +10ma low loss isolation isolation isolation +10ma -10ma +10ma +10ma isolation low loss isolation isolation +10ma +10ma -10ma +10ma isolation isolation low loss isolation +10ma +10ma +10ma -10ma isolation isolation isolation low loss parameter frequency minimum nominal maximum units insertion loss 6 ghz - 0.80 1.0 db 12 ghz - 1.00 1.2 db 18 ghz - 1.40 1.6 db isolation 6 ghz 40 50 - db 12 ghz 35 40 - db 18 ghz 30 35 - db input return loss 6 ghz - 10 - db 12 ghz - 15 - db 18 ghz - 10 - db switching speed 1 - - 80 - ns
rev. v4 hmic? silicon pin diode switch with integrated bias network MA4SW410B-1 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. 3 MA4SW410B-1 typical insertion loss -5 -4 -3 -2 -1 0 23456789101112131415161718 frequency (ghz) db j1 to j2 j1 to j3 j1 to j4 j1 to j5 MA4SW410B-1 typical isolation -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) db j1 to j2 j1 to j3 j1 to j4 j1 to j5 MA4SW410B-1 typical return loss -30 -25 -20 -15 -10 -5 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) db input rl j2 rl j3 rl j4 rl j5 rl typical rf performance @ t amb = +25c (probed on wafer)
rev. v4 hmic? silicon pin diode switch with integrated bias network MA4SW410B-1 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. 4 MA4SW410B-1 schematic
rev. v4 hmic? silicon pin diode switch with integrated bias network MA4SW410B-1 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. 5 MA4SW410B-1 chip outline drawing 1,2 notes: 1. topside and backside metallization is gold , 2.5m thick typical. dim mils millimeters min max min max a 85 89 2.17 2.27 b 106 110 2.69 2.79 c 48 52 1.22 1.32 d 7 11 0.17 0.27 e 33 34 0.85 0.86 f 57 61 1.46 1.56 g 77 81 1.96 2.06 rf bond pads (j1-j6) 7 x 5 ref. .178 x .127 ref. dc bond pads (b2-b5) 5 x 5 ref. .127 x .127 ref. chip thickness 5 ref. 0.127 ref. h 46 50 1.18 1.28 i 24 28 0.61 0.71 b a c c d e f g e f d i i h
rev. v4 hmic? silicon pin diode switch with integrated bias network MA4SW410B-1 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. 6 cleanliness these chips should be handled in a clean environment. wire bonding thermosonic wedge wire bonding using 0.00025? x 0.003? ribbon or 0. 001? diameter gold wire is recommended. a heat stage temperature of 150 o c and a force of 18 to 22 grams should be used. ultrasonic energy should be adjusted to the minimum required to achieve a good bond. rf bond wires should be kept as short and straight as possible. mounting the hmic switches have ti-pt-au back metal. they c an be die mounted with a gold-tin eutectic solder preform or conductive epoxy. mounting surface must be clean and flat. *note: this device utilizes a proc ess step designed to have minimal to non-existent burring around the perimeter of the die. eutectic die attachment an 80/20, gold-tin, eutectic solder preform is recommended with a work surface temperature of 255 o c and a tool tip temperature of 265 o c. when hot gas is applied, the tool tip temperature should be 290 o c. the chip should not be exposed to temperatures greater than 320 o c for more than 20 seconds. no more than three seconds should be required for attachment. solders containing tin should not be used. epoxy die attachment a minimum amount of epoxy should be used. a thin epoxy fillet should be visible around the perimeter of the chip after placement. cure epoxy per manufacturer?s schedule. (typically 125-150 o c). wire/ribbon and die at tachment recommendations part number package MA4SW410B-1 gel pack (25 per) masw-004102-12760w waffle pack (25 per) ordering information
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